GTRA412852FC-V1

High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz

The GTRA412852FC is a 235-watt (P3dB) GaN-on-SiC HEMT D-mode amplifier for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTRA412852FC-V1
Description
High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz
Min Frequency (MHz)
3700
Max Frequency(MHz)
4100
P3dB Output Power(W)
235
Gain(dB)
11.5
Efficiency(%)
45
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Input and output matched
  • Typical pulsed CW performance; 4100 MHz, 48 V, 10 µs pulse width, 100 µs PP
    • Output power at P3dB = 235 W
    • Gain = 10 dB
    • Efficiency = 45%
    • Capable of handling 10:1 VSWR @48 V, 30 W (WCDMA) output power
    • Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
    • Low thermal resistance
    • Pb-free and RoHS compliant
    • GaN on SiC HEMT technology

Technical Resources

Datasheet


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GTRA412852FC-V1
235W 48V 3700-4100 MHz GaN HEMT