GTRA374902FC-V1

High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3600 - 3700 MHz

The GTRA374902FC is a 450-watt (P3dB) GaN-on-SiC  HEMT D-mode amplifier for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTRA374902FC-V1
Description
High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3600 - 3700 MHz
Min Frequency (MHz)
3600
Max Frequency(MHz)
3700
P3dB Output Power(W)
450
Gain(dB)
12.0
Efficiency(%)
38
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Asymmetrical Doherty design: Main P3dB 220 W Typ, Peak P3dB 300 W Typ
  • Typical Pulsed CW performance; 3700 MHz, 48 V, 10% duty cycle
  • Output power 450 W
  • Efficiency 60%
  • Gain 11.5 dB
  • Capable of handling 10:1 VSWR @48 V, 63 W (WCDMA) output power
  • Low thermal resistance
  • Pb-free and RoHS complian
  • Input matched

Technical Resources

Datasheet


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GTRA374902FC-V1
3600-3700 MHz, 40 Watts, 48V