GTRA263902FC-V2

High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz

The GTRA263902FC is a 370-watt (P3dB) GaN-on-SiC HEMT D-mode amplifier for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTRA263902FC-V2
Description
High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz
Min Frequency (MHz)
2495
Max Frequency(MHz)
2690
P3dB Output Power(W)
370
Gain(dB)
13.8
Efficiency(%)
54
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Typical pulsed CW performance: 2690 MHz; 48 V; combined outputs
  • Output power at P3dB 370 W
  • Efficiency 70%
  • Gain 15 dB
  • Capable of handling 10:1 VSWR @48 V; 56 W (CW) output power
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Input matched

Technical Resources

Datasheet


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GTRA263902FC-V2
370W 48V 2495-2690 MHz GaN SiC HEMT