GTRB206002FC

High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1930 - 2020 MHz

The GTRB206002FC/1 is a 500-watt (P3dB) GaN-on-SiC HEMT D-mode amplifier designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTRB206002FC
Description
High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1930 - 2020 MHz
Min Frequency (MHz)
1930
Max Frequency(MHz)
2020
P3dB Output Power(W)
500
Gain(dB)
14.8
Efficiency(%)
53
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Typical Pulsed CW performance, 2020 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
  • Output power at P3dB = 500 W
  • Efficiency at P3dB = 63%
  • Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Pb-free and RoHS compliant
  • GaN-on-SiC HEMT technology

Technical Resources

Datasheet


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GTRB206002FC/1-V1
600W, 48V, 1930-2020 MHz, GaN-SiC HEMT